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1.

Akinlami J. O. 
Photoemission study of the electronic structure of praseodymium filled skutterudite PrOs4Sb12) [Електронний ресурс] / J. O. Akinlami, A. M. Awobode // Semiconductor physics, quantum electronics & optoelectronics. - 2011. - Vol. 14, № 2. - С. 237-240. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2011_14_2_21
Here we report the electronic structure of praseodymium filled skutterudite compound PrOs4Sb12. The theoretical photoemission spectrum (PES) at <$E h bar omega~=~21,2> eV shows four distinct structures peaking at about -0,2, -7,7, -13,7 and -18,2 eV. But on increasing the photon energy to 40,8 eV, the peak at -0,2 eV becomes a prominent or pronounced peak, the peak at -7,7 eV decreases in intensity, the peak at -13,7 eV increases intensity, the peak at -18,2 eV reduces in intensity and another peak emerges. These structures are interpreted to be associated with the density-of-states features on the basis of the results of band structure calculation. Hence, the peak at -0,2 eV arises from the symmetry point P at -11,61 eV, the peak at -7,7 eV comes from the symmetry point P at -11,62 eV, the peak at -13,7 eV arises from the symmetry point P at -11,88 eV and the peak at -18,2 eV arises from the symmetry point P at -11,88 eV. The PES energy level difference for PrOs4Sb12 fell within the range -0,5 to -7,5 eV indicating that it can be used in designing electronic devices. The energies of specific electronic states in the band structure of PrOs4Sb12 showed that it could be used for the development of solid-state devices.
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2.

Akinlami J. O. 
Complex index of refraction of indium nitride InN [Електронний ресурс] / J. O. Akinlami, F. M. Bolaji // Semiconductor physics, quantum electronics & optoelectronics. - 2012. - Vol. 15, № 3. - С. 276-280. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2012_15_3_17
We have investigated the complex index of refraction of Indium Nitride (InN). We obtained refractive index which has the maximum value 2,59 at the photon energy 5,30 eV, the extinction coefficient which has the maximum value 0,86 at the photon energy 5,30 eV, the dielectric constant, the real part of the complex dielectric constant with the peak value 5,90 at the photon energy 5,30 eV and the imaginary part of the complex dielectric constant with the maximum value 4,48 at the photon energy 5,30 eV, the transmittance with the maximum value 0,1402 at the photon energy 5,30 eV, the absorption coefficient which has its maximum value 86,0 at the photon energy 11,50 eV and reflection coefficient which with the maximum value 0,49 at the photon energy 5,3 eV. Thus, InN has the potential to operate optimally in a photonic device at the photon energy 5,30 eV.
Попередній перегляд:   Завантажити - 1.193 Mb    Зміст випуску    Реферативна БД     Цитування
3.

Akinlami J. O. 
Reflection coefficient and optical conductivity of gallium nitride GaN [Електронний ресурс] / J. O. Akinlami, I. O. Olateju // Semiconductor physics, quantum electronics & optoelectronics. - 2012. - Vol. 15, № 3. - С. 281-284. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2012_15_3_18
Here we report the reflection coefficient and optical conductivity of gallium nitride (GaN). The reflection coefficient obtained in the photon energy range 2 - 10 eV shows five distinct peaks at photon energies 3,5, 5,0, 7,0, 8,0, and 9,0 eV. It was observed that the reflection coefficient has its highest value 0,54 at the photon energy 7,0 eV. Variation of the real part of optical conductivity with photon energy shows five distinct peaks at photon energies 3,5, 5,0, 7,0, 8,0, and 9,0 eV. It was observed that the real part of optical conductivity has the maximum value <$E 5,75~cdot~10 sup 15> for the photon energy 7,0 eV, and it decreases until coming to zero at 10,0 eV. The peaks indicate regions of deeper penetration of electromagnetic waves, and they also show high conductivity. The imaginary part of optical conductivity obtained for GaN in the photon energy range 2,0 to 10,0 eV shows five distinct peaks at photon energies 3,5, 5,0, 7,0, 8,0, and 9,0 eV. It was observed that it has a minimum value of <$E -6,46~cdot~10 sup 15> for the photon energy 8,0 eV and a maximum value at <$E -1,2~cdot~10 sup 15>. This implies that there is a reduction in conductivity of GaN, and likewise, reduction in the propagation of electromagnetic waves in this region.
Попередній перегляд:   Завантажити - 1.147 Mb    Зміст випуску    Реферативна БД     Цитування
4.

Akinlami J. O. 
Electronic structure and optical properties of HgSe [Електронний ресурс] / J. O. Akinlami, O. O. Odeyemi // Semiconductor physics, quantum electronics & optoelectronics. - 2018. - Vol. 21, № 3. - С. 288-293. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2018_21_3_13
We have performed the density functional theory calculations of mercury selenidc compound using the plane-wave pseudo-potential (PWPP) method within the generalized gradient approximation to investigate the electronic structure and dielectric response of this compound in its zinc blende phase. The calculated lattice and volume parameters are in consonance with other experimental and theoretical works. The electronic structure of the compound showed that mercury selenide exhibited a semi-metallic property with a negligible direct band gap of about 0 eV at high symmetry gamma-point. Real and imaginary parts of dielectric function as a function of photon energy have been also obtained.
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5.

Akinlami J. O. 
Electronic, structural and paramagnetic properties of magnesium tellurides [Електронний ресурс] / J. O. Akinlami, M. O. Omeike, A. J. Akindiilete // Semiconductor physics, quantum electronics & optoelectronics. - 2019. - Vol. 22, № 1. - С. 5-10. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2019_22_1_4
This study has examined the ground-state electronic, structural and, in addition, paramagnetic properties of semiconductor MgTe in its zinc blende phase by using the density functional theory (DFT). Exchange-correlation potentials have been approximated with the Projected Augmented Wave (PAW) Generalized Gradient Approximation (GGA). From the calculated lattice parameter, we determined the bulk modulus and first pressure derivative. Also, reported are other ground state properties: density of states (DOS), band structure, projected DOS (PDOS) and magnetic properties. A direct large band-gap of 2,358 eV was observed from the band structure that has close concurrence with former reported values. Although this value is also smaller than the reported experimental values, it is the closest of all the calculated values. The magnetic state of the compound was observed to be paramagnetic in the ground state.
Попередній перегляд:   Завантажити - 714.293 Kb    Зміст випуску    Реферативна БД     Цитування
6.

Akinlami J. O. 
Electronic and optical properties of ОІ-HgS [Електронний ресурс] / J. O. Akinlami, F. C. Onyeanu // Semiconductor physics, quantum electronics & optoelectronics. - 2019. - Vol. 22, № 2. - С. 150-155. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2019_22_2_5
Electronic and optical properties of <$Ebeta>-HgS have been investigated using the density functional theory. The calculated lattice parameter is <$E6,043~roman A back 45 up 35 symbol Р>, the bulk modulus is 57,17 GPa, the equilibrium volume is <$E55,25~{ roman A back 45 up 35 symbol Р } sup 3>. From the band structure, a direct band gap of 0,00002 eV was obtained, which agreed well with other calculations. The plot of the dielectric constant against photon energy indicated several distinctive peaks. The imaginary part has a peak value of 34,99 at 0,47 eV and the real part has a peak value of 29,65 at 0,40 eV. The values obtained for electronic and optical properties of <$Ebeta>-HgS are essentially important for applications in optoelectronics.
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